WebJan 4, 2024 · So far, it has been revealed that the ferroelectricity in the HfO 2 family is induced by various dopant elements and annealing conditions, especially post annealing with and without a top metal electrode [post-metallization annealing (PMA) or post-deposition annealing (PDA)], 5–8 5. J. WebIncipient ferroelectric to a possible ferroelectric transition in Te4+ doped calcium copper titanate (CaCu3Ti4O12) ceramics at low temperature as evidenced by Raman and dielectric spectroscopy
Enhancing superconductivity in SrTiO3 films with strain
WebJul 22, 2016 · The incipient ferroelectric behaviour of IV–VI compounds is strongly sensitive to carrier concentration 23, which suggests the importance of the valence and conduction p-type bands very near the band edges in determining the equilibrium structure 1. Ultrafast photoexcitation provides a means to affect the electron-phonon coupling by ... WebJun 20, 2012 · Abstract Epitaxial CaMnO 3 films grown with 2.3 % tensile strain on (001)-oriented LaAlO 3 substrates are found to be incipiently ferroelectric below 25 K. Optical second harmonic generation (SHG) was used for the detection of the incipient polarization. chipotle ottawa menu
The origin of incipient ferroelectricity in lead telluride
WebJun 14, 2024 · The resulting ultrafast control over ferroelectricity may find rich applications in memory devices , ... (THz) light field to move the ions into their positions in the incipient crystalline phase. This case was foreshadowed by molecular dynamics (MD) simulations of THz field–induced switching between different FE domain orientations, ... WebJul 22, 2016 · Abstract. The interactions between electrons and lattice vibrations are fundamental to materials behavior. In the case of group IV–VI, V and related materials, these interactions are strong, and the materials exist near electronic and structural phase transitions. The prototypical example is PbTe whose incipient ferroelectric behavior has ... WebDec 5, 2024 · [3] Mueller S, Mueller J, Singh A, Riedel S, Sundqvist J, Schroeder U and Mikolajick T 2012 Incipient ferroelectricity in Al-Doped HfO 2 thin films Adv. Funct. Mater. 22 2412–7. Crossref; Google Scholar [4] Park M H et al. 2015 Ferroelectricity and antiferroelectricity of doped thin HfO 2-based films Adv. Mater. 27 1811–31. Crossref; … grant view change tracking t-sql